Photovoltaic enhancement due to surface-plasmon assisted visible-light absorption at the inartificial surface of lead zirconate-titanate film.
Identifieur interne : 000085 ( Main/Exploration ); précédent : 000084; suivant : 000086Photovoltaic enhancement due to surface-plasmon assisted visible-light absorption at the inartificial surface of lead zirconate-titanate film.
Auteurs : RBID : pubmed:24477668Abstract
PZT film of 300 nm thickness was deposited on tin indium oxide (ITO) coated quartz by a sol-gel method. Four metal electrodes, such as Pt, Au, Cu and Ag, were used as top electrodes deposited on the same PZT film by sputtering at room temperature. In ITO-PZT-Ag and ITO-PZT-Au structures, the visible light (400-700 nm) can be absorbed partially by a PZT film, and the maximum efficiency of photoelectric conversion of the ITO-PZT-Ag structure was enhanced to 0.42% (100 mW cm(-2), AM 1.5G), which is about 15 times higher than that of the ITO-PZT-Pt structure. Numerical simulations show that the natural random roughness of polycrystalline-PZT-metal interface can offer a possibility of coupling between the incident photons and SPs at the metal surface. The coincidence between the calculated SP properties and the measured EQE spectra reveals the SP origin of the photovoltaic enhancement in these ITO-PZT-metal structures, and the improved photocurrent output is caused by the enhanced optical absorption in the PZT region near the metal surface, rather than by the direct charge-transfer process between two materials.
DOI: 10.1039/c3nr05757g
PubMed: 24477668
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Photovoltaic enhancement due to surface-plasmon assisted visible-light absorption at the inartificial surface of lead zirconate-titanate film.</title><author><name sortKey="Zheng, Fengang" uniqKey="Zheng F">Fengang Zheng</name><affiliation wicri:level="1"><nlm:affiliation>Department of Physics and Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China. zhfg@suda.edu.cn hsun@suda.edu.cn.</nlm:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Physics and Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006</wicri:regionArea></affiliation></author><author><name sortKey="Zhang, Peng" uniqKey="Zhang P">Peng Zhang</name></author><author><name sortKey="Wang, Xiaofeng" uniqKey="Wang X">Xiaofeng Wang</name></author><author><name sortKey="Huang, Wen" uniqKey="Huang W">Wen Huang</name></author><author><name sortKey="Zhang, Jinxing" uniqKey="Zhang J">Jinxing Zhang</name></author><author><name sortKey="Shen, Mingrong" uniqKey="Shen M">Mingrong Shen</name></author><author><name sortKey="Dong, Wen" uniqKey="Dong W">Wen Dong</name></author><author><name sortKey="Fang, Liang" uniqKey="Fang L">Liang Fang</name></author><author><name sortKey="Bai, Yongbin" uniqKey="Bai Y">Yongbin Bai</name></author><author><name sortKey="Shen, Xiaoqing" uniqKey="Shen X">Xiaoqing Shen</name></author><author><name sortKey="Sun, Hua" uniqKey="Sun H">Hua Sun</name></author><author><name sortKey="Hao, Jianhua" uniqKey="Hao J">Jianhua Hao</name></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="doi">10.1039/c3nr05757g</idno><idno type="RBID">pubmed:24477668</idno><idno type="pmid">24477668</idno><idno type="wicri:Area/Main/Corpus">000192</idno><idno type="wicri:Area/Main/Curation">000192</idno><idno type="wicri:Area/Main/Exploration">000085</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">PZT film of 300 nm thickness was deposited on tin indium oxide (ITO) coated quartz by a sol-gel method. Four metal electrodes, such as Pt, Au, Cu and Ag, were used as top electrodes deposited on the same PZT film by sputtering at room temperature. In ITO-PZT-Ag and ITO-PZT-Au structures, the visible light (400-700 nm) can be absorbed partially by a PZT film, and the maximum efficiency of photoelectric conversion of the ITO-PZT-Ag structure was enhanced to 0.42% (100 mW cm(-2), AM 1.5G), which is about 15 times higher than that of the ITO-PZT-Pt structure. Numerical simulations show that the natural random roughness of polycrystalline-PZT-metal interface can offer a possibility of coupling between the incident photons and SPs at the metal surface. The coincidence between the calculated SP properties and the measured EQE spectra reveals the SP origin of the photovoltaic enhancement in these ITO-PZT-metal structures, and the improved photocurrent output is caused by the enhanced optical absorption in the PZT region near the metal surface, rather than by the direct charge-transfer process between two materials.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Process"><PMID Version="1">24477668</PMID><DateCreated><Year>2014</Year><Month>02</Month><Day>14</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">2040-3372</ISSN><JournalIssue CitedMedium="Internet"><Volume>6</Volume><Issue>5</Issue><PubDate><Year>2014</Year><Month>Mar</Month><Day>7</Day></PubDate></JournalIssue><Title>Nanoscale</Title><ISOAbbreviation>Nanoscale</ISOAbbreviation></Journal><ArticleTitle>Photovoltaic enhancement due to surface-plasmon assisted visible-light absorption at the inartificial surface of lead zirconate-titanate film.</ArticleTitle><Pagination><MedlinePgn>2915-21</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1039/c3nr05757g</ELocationID><Abstract><AbstractText>PZT film of 300 nm thickness was deposited on tin indium oxide (ITO) coated quartz by a sol-gel method. Four metal electrodes, such as Pt, Au, Cu and Ag, were used as top electrodes deposited on the same PZT film by sputtering at room temperature. In ITO-PZT-Ag and ITO-PZT-Au structures, the visible light (400-700 nm) can be absorbed partially by a PZT film, and the maximum efficiency of photoelectric conversion of the ITO-PZT-Ag structure was enhanced to 0.42% (100 mW cm(-2), AM 1.5G), which is about 15 times higher than that of the ITO-PZT-Pt structure. Numerical simulations show that the natural random roughness of polycrystalline-PZT-metal interface can offer a possibility of coupling between the incident photons and SPs at the metal surface. The coincidence between the calculated SP properties and the measured EQE spectra reveals the SP origin of the photovoltaic enhancement in these ITO-PZT-metal structures, and the improved photocurrent output is caused by the enhanced optical absorption in the PZT region near the metal surface, rather than by the direct charge-transfer process between two materials.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Zheng</LastName><ForeName>Fengang</ForeName><Initials>F</Initials><Affiliation>Department of Physics and Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China. zhfg@suda.edu.cn hsun@suda.edu.cn.</Affiliation></Author><Author ValidYN="Y"><LastName>Zhang</LastName><ForeName>Peng</ForeName><Initials>P</Initials></Author><Author ValidYN="Y"><LastName>Wang</LastName><ForeName>Xiaofeng</ForeName><Initials>X</Initials></Author><Author ValidYN="Y"><LastName>Huang</LastName><ForeName>Wen</ForeName><Initials>W</Initials></Author><Author ValidYN="Y"><LastName>Zhang</LastName><ForeName>Jinxing</ForeName><Initials>J</Initials></Author><Author ValidYN="Y"><LastName>Shen</LastName><ForeName>Mingrong</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Dong</LastName><ForeName>Wen</ForeName><Initials>W</Initials></Author><Author ValidYN="Y"><LastName>Fang</LastName><ForeName>Liang</ForeName><Initials>L</Initials></Author><Author ValidYN="Y"><LastName>Bai</LastName><ForeName>Yongbin</ForeName><Initials>Y</Initials></Author><Author ValidYN="Y"><LastName>Shen</LastName><ForeName>Xiaoqing</ForeName><Initials>X</Initials></Author><Author ValidYN="Y"><LastName>Sun</LastName><ForeName>Hua</ForeName><Initials>H</Initials></Author><Author ValidYN="Y"><LastName>Hao</LastName><ForeName>Jianhua</ForeName><Initials>J</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2014</Year><Month>01</Month><Day>30</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanoscale</MedlineTA><NlmUniqueID>101525249</NlmUniqueID><ISSNLinking>2040-3364</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2014</Year><Month>1</Month><Day>30</Day></PubMedPubDate><PubMedPubDate PubStatus="epublish"><Year>2014</Year><Month>2</Month><Day>13</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>1</Month><Day>31</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>1</Month><Day>31</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>1</Month><Day>31</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1039/c3nr05757g</ArticleId><ArticleId IdType="pubmed">24477668</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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